PART |
Description |
Maker |
MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道,低Qg,快速开WFET,超低开关损 N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
ST72324J2B6 ST72324J2T3 ST72324J4B6 ST72324K2T3 ST |
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE 288Mb RLDRAM Component
|
STMicroelectronics 意法半导
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑
|
Analog Devices, Inc. TOKO, Inc. Altera, Corp.
|
LTC2436-1CGN LTC2436-1IGN LTC2436-1 LTC2436-1-15 |
2-Channel Differential Input 16-Bit No Latency ADC 2-Channel Differential Input 16-Bit No Latency DS ADC 2-CH 16-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO16 2-Channel Differential Input 16-Bit No Latency DS ADC
|
Linear Technology Corporation Linear Technology, Corp.
|
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构(2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
LTC2439-1 LTC2439-1CGN LTC2439-1IGN |
8-/16-Channel 16-Bit No Latency Delta Sigma ADC 8-/16-Channel 16-Bit No Latency Delta Sigma?ADC 8-/16-Channel 16-Bit No Latency Delta-Sigma ADC
|
LINER[Linear Technology]
|
T81L0003A-BK T81L0003A T81L0003A-AD T81L0003A-AK T |
Reduced I/O 8-bit MCU
|
TMT[Taiwan Memory Technology]
|
CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|